JGDN108B
JGDN108B
HJT Bifacial Module
425W~445W
  • Based on 182mm wafer, N-type HJT half-cut cells

  • Module power up to 445W; module efficiency up to 22.70%

  • Use super MBB half-cut cell technology to minimize micro-crack impacts, so no cutting loss on modules

  • Power output from the front is 4.1% more than that of TOPCon module

  • No Boron-Oxygen-Induced Degradation (BO-LID), excellent anti-LeTID & anti-PID performance. Low power degradation, and high energy yield

  • With the bifaciality up to 90%

Product advantages

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